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科研成果

 
 

 

 2022年:

  • Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer
    Shaoying Ke , Xiaoting Xiao, Jinlong Jiao, Xiaoqiang Chen, Zhiwei Huang,Jinrong Zhou , and Songyan Chen
     IEEE Transactions on Electron Devices , 2022,69（3）, DOI: 10.1109/TED.2022.3143492

  • Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer
    Shaoying Ke , Jiahui Li , Jie Wang , Jinrong Zhou a Zhiwei Huang , Jinlong Jiao , Ruoyun Ji , Songyan Chen ,
    Vacuum, 2022, 196: 110735, DOI: 10.1016/j.vacuum.2021.110735

  • Thickness-Dependent Behavior of Strain Relaxation and Sn Segregation of GeSn Epilayer during Rapid Thermal Annealing
    Cai, Hongjie, Kun Qian, Yuying An, Guangyang Lin, Songsong Wu, Haokun Ding, Wei Huang, Songyan Chen, Jianyuan Wang，Cheng Li.
    Journal of Alloys and Compounds,904：164068, https://doi.org/10.1016/j.jallcom.2022.164068.

  • Fabrication of Ordered Arrays of GeSn Nanodots Using Anodic Aluminum Oxide as a Template
    Gan, Qiuhong, Jiulong Yu, Ye Liao, Wei Huang, Guangyang Lin, Jianyuan Wang, Jianfang Xu, Cheng Li, Songyan Chen，Jun Zheng.
    Japanese Journal of Applied Physics , 61,070902, https://doi.org/10.35848/1347-4065/ac759a

  • Interfacial Nitrogen Engineering of Robust Silicon/MXene Anode toward High Energy Solid-State Lithium-Ion Batteries
    Han, Xiang, Weijun Zhou, Minfeng Chen, Jizhang Chen, Guanwen Wang, Bo Liu, Linshan Luo
    Journal of Energy Chemistry , 2022, 67):727–35, https://doi.org/10.1016/j.jechem.2021.11.021.

  • Liquid-Phase Sintering Enabling Mixed Ionic-Electronic Interphases and Free-Standing Composite Cathode Architecture toward High Energy Solid-State Battery
    Han, Xiang, Weijun Zhou, Minfeng Chen, Linshan Luo, Lanhui Gu, Qiaobao Zhang, Jizhang Chen, Bo Liu, Songyan Chen，Wenqing Zhang
    Nano Research, 2022, 15（7），6156-6167, https://doi.org/10.1007/s12274-022-4242-5.

  • Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature
    Huang, Donglin, Ruoyun Ji, Liqiang Yao, Jinlong Jiao, Xiaoqiang Chen, Cheng Li, Wei Huang, Songyan Chen，Shaoying Ke
    Vacuum , 2022, 196：110735,https://doi.org/10.1016/j.vacuum.2021.110735.

  • Induction of planar Li growth with designed interphases for dendrite-free Li metal anodes
    Lin, Guangyang, Kun Qian, Hongjie Cai, Haochen Zhao, Jianfang Xu, Songyan Chen, Cheng Li, Ryan Hickey, James Kolodzey，Yuping Zeng.
    Journal of Alloys and Compounds , 2022, 915: 165453, https://doi.org/10.1016/j.jallcom.2022.165453.

  • Controllable Synthesis of Si-Based GeSn Quantum Dots with Room-Temperature Photoluminescence
    Ziwei Wang, Ziqi Zhang, Donglin Huang, Shaoying Ke, Zongpei Li, Wei Huang, Jianyuan Wang, Cheng Li and Songyan Chen
    Applied Surface Science , 2022, 579: 152249, https://doi.org/10.1016/j.apsusc.2021.152249.

    •  2021年:

     2020年:

    • Real-time observation of ion migration in halide perovskite by photoluminescence imaging microscopy
      Zhang, Jing, Li, Cheng, Chen, Mengyu and Huang, Kai
      Journal of Physics D: Applied Physics, 2020, 54(4), DOI: 10.1088/1361-6463/abbf76

    • Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold
      Hong, Haiyang, Zhang, Lu, Qian, Kun, Ye Liao, An, Yuying, Li, Cheng, Jian-Yuan Wang， Li, Jun ，Chen, Songyan ，Huang, Wei Wang, Jianyuan and Zhang, Shuhong
      Optics Express, 2020, 29(1), DOI: 10.1364/oe.409899

    • A review: wafer bonding of Si based semiconductors
      Shaoying Ke, Dongke Li, and Songyan Chen
      J. Phys. D: Appl. Phys. 53 (2020) 323001 (38pp), DOI: 10.1088/1361-6463/ab8769

    • Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)3 and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)3 modification
      Lianchuan Li, Ziqi Zhang, Linshan Luo, Run You, Jinlong Jiao, Wei Huang, Jianyuan Wang, Cheng Li,Xiang Han, Songyan Chen∗
      Ionics (2020) 26:3815–3821, DOI:10.1007/s11581-020-03503-x
    •  
      High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain
      Zhiwei Huang, Chunyu Yu, Ailing Chang, Yimo Zhao, Wei Huang, Songyan Chen, and Cheng Li*
      J Mater Sci (2020) 55:8630–8641, DOI:10.1007/s10853-020-04625-3
    •   
      Low temperature growth of graphitic carbon on porous silicon for high-capacity lithium energy storage
       Xiang Han*, Ziqi Zhang , Songyan Chen *, Yong Yang
    • Journal of Power Sources 463 (2020) 228245, DOI:10.1016/j.jpowsour.2020.228245
                  
      Observation of trap-related phenomena in electrical performance ofback-gated MoS2 field-effect transistors
      Yichen Mao, Ailing Chang, Pengpeng Xu, Chunyu Yu, Wei Huang,Songyan Chen, Zhengyun Wu and Cheng Li
      Semicond. Sci. Technol. 35 (2020) 095023 (8pp), DOI：10.1088/1361-6641/ab9d34

      On the Interface Design of Si and Multilayer Graphene for a HighPerformance Li-Ion Battery Anode
      Xiang Han, Ziqi Zhang, Huixin Chen, Qiaobao Zhang, Songyan Chen*，and Yong Yang
    • ACS Appl. Mater. Interfaces 2020, 12, 44840?44849，DOI：10.1021/acsami.0c13821

      Polycrystalline Ge intermediate layer for Ge/Si wafer bonding and defect elimination in Si (SOI)-based exfoliated Ge film
    • Shaoying Ke*， Jinrong Zhou, Donglin Huang, Ziwei Wang, Cheng Li, Songyan Chen*
    • Vacuum 172 (2020) 109047，DOI：10.1016/j.vacuum.2019.109047

      Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes
    • Ziqi Zhang, Xiang Han , Lianchuan Li, Pengfei Su, Wei Huang, Jianyuan Wang, Jianfang Xu, Cheng Li, Songyan Chen *, Yong Yang*
    • Journal of Power Sources 450 (2020) 227593，DOI：10.1016/j.jpowsour.2019.227593

       2019年:

       2018年:

       2017年:

                 Impacts of ITO interlayer thickness on metal/n-Ge contacts

      • Zhiwei Huang, Yichen Mao, Guangyang Lin, Yisen Wang, Cheng Li ⇑, Songyan Chen, Wei Huang, Jianfang Xu
        Materials Science and Engineering B 224 (2017) 103–109

         2016年:  

      • Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate
        Guangyang Lin, Xiaohui Yi1, Cheng Li, Ningli Chen, Lu Zhang, Songyan Chen, Wei Huang, Jianyuan Wang, Xihuan Xiong and Jiaming Sun
        Materials Science in Semiconductor Processing    Volume 56, December 2016, Pages 282–286
      • Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation
        Guangyang Lin, Ningli Chen, Lu Zhang, Zhiwei Huang, Wei Huang, Jianyuan Wang, Jianfang Xu, Songyan Chen and Cheng Li?*
        Materials Science in Semiconductor Processing    Volume 56, December 2016, Pages 282–286
      • Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate
        Guangyang Lin, Ningli Chen, Lu Zhang, Zhiwei Huang, Wei Huang, Jianyuan Wang, Jianfang Xu, Songyan Chen and Cheng Li?*
        Materials?2016,?9(10), 803;
      • Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics
        Chao Lu, Jue Yu, Xiao-Wei Chi, Guang-Yang Lin, Xiao-Ling Lan, Wei Huang*, Jian-Yuan Wang, Jian-Fang Xu, Chen Wang, Cheng Li, Song-Yan Chen, Chunli Liu, and Hong-Kai Lai
        Applied Physics Express, 9, 041501, 2016.
      • An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for GeMOS devices
        XiaoweiChi,Xiaoling Lan, Chao Lu,HaiyangHong,Cheng Li, Songyan Chen,Hongkai Lai,WeiHuang and JianfangXu
        Materials Research Express, 3, 035012, 2016.



      • Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics
        Chao Lu, Jue Yu, Xiao-Wei Chi, Guang-Yang Lin, Xiao-Ling Lan, Wei Huang*, Jian-Yuan Wang, Jian-Fang Xu, Chen Wang, Cheng Li, Song-Yan Chen, Chunli Liu, and Hong-Kai Lai
        Applied Physics Express 9, 041501, 2016.
      •  High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
        Wei Huang, Chao Lu, Jue Yu, Jiang-Bin Wei, Chao-Wen Chen, Chen Wang, Cheng Li, Song-Yan Chen, Chun-Li Liu, and Hong-Kai Lai
        Chinese Physics B 25, 057304, 2016.

         2015年: 

       

      • NiSix/a-Si Nanowires with Interfacial Engineering as Anodes for High-Rate Lithium-Ion Batteries
        Xiang Han, Huixin Chen,Xin Li, Shumei Lai,Yihong Xu, Cheng Li, Songyan Chen, Yong Yang
        ACS Applied Materials & Interfaces，8, 673-679, 2016.
      • Interfacial nitrogen stabilizes carbon-coated mesoporous silicon particle anodes?
        Xiang Han, Huixin Chen, Xin Li, Jianyuan Wang, Cheng Li, Songyan Chen, Yong Yang
      • Journal of Materials Chemistry A, 4, 434-442, 2016.
      •  A Peanut Shell Inspired Scalable Synthesis of Three-Dimensional Carbon Coated Porous Silicon Particles as an Anode for Lithium-Ion Batteries
        Xiang Han, Huixin Chen, Jingjing Liu, Hanhui Liu, Peng Wang, Kai Huang, Cheng Li, Songyan Chen, Yong Yang
        Electrochimica Acta , 156, 11-19, 2015.
      • Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications
        Q.H. Lu, R. Huang, L.S. Wang, Z.G. Wu*, C. Li,* Q. Luo, S.Y. Zuo, J. Li, D.L. Peng, G.L. Han, P.X. Yan
        Journal of Magnetism and Magnetic Materials, 394, 253-259, 2015.


      • Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride.
        Wei Jiang-Bin, Chi Xiao-Wei, Lu Chao, Wang Chen, Lin Guang-Yang, Wu Huan-Da, Huang Wei, Li Cheng, Chen Song-Yan, Liu Chun-Li,
        Chin. Phys. B, 24, 77306-077306, 2015.
      • 汪建元, 王尘, 李成, 陈松岩, “硅基锗薄膜选区外延生长研究,” 物理学报, 64, 128102-128102, 2015.

         2014年: 

      •  Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height
        Hanhui Liu, Peng Wang, Dong feng Qi, Xin Li, Xiang Han, Chen Wang, Songyan Chen,a) Cheng Li, and Wei Huang
        Applied Physics Letters, 105, 192103, 2014.
      • Ohmic Contact to n-Type Ge With Compositional W Nitride
        Huan Da Wu, Chen Wang, Jiang Bin Wei, Wei Huang, Cheng Li, Hong Kai Lai, Jun Li, Chunli Liu, and Song Yan Chen
        IEEE Electron Device Letters, 35(12) , 192103, 2014.
      •  Phosphorus diffusion in germanium following implantation and excimer laser annealing, 
        C. Wang, C. Li, S. Huang, W. Lu, G. Yan, M. Zhang, H. Wu, G. Lin, J. Wei, and W. Huang,
        Applied Surface Science, 300, 208-212, 2014.


      •
      • Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-TemperaturePreannealing and Excimer Laser Annealing
        Chen Wang, Cheng Li, Guangyang Lin, Weifang Lu, Jiangbin Wei, Wei Huang, Hongkai Lai,Songyan Chen, Zengfeng Di, and Miao Zhang

        IEEE Trabsactions on Eletron Devices, 61( 9), 2014

      • Evolution of laser-induced specific nanostructures on SiGe compounds via laser irradiation intensity tuning,
        Dongfeng Qi, Hanhui Liu, Peng Wang, Songyan Chen*, Wei Huang, Cheng Li, and Hongkai Lai,
        IEEE Photonics Journal, DOI: 10.1109/JPHOT. 2013. 2294631.

         2013年:

      • Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes,
        Dongfeng Qi, Hanhui Liu, Wei Gao, Qinqin Sun,Songyan Chen*, Wei Huang, Cheng Li and Hongkai Lai.
        Journal of Materials Chemistry C, 1(41), 6878-6882, 2013.
      • Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge,
        Yujiao Ruan, Chengzhao Chen, Shihao Huang, Wei Huang, Songyan Chen*, Cheng Li, and Jun Li,
        Electron Devices, IEEE Transaction on, 60(11), 3741-3745, 2013.
      • Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate,
        Dongfeng Qi, Hanhui Liu, Songyan Chen*, ChengLi, and Hongkai Lai,
        Journal of Crystal Growth, 375, 115-118, 2013        . 
      • Ohmic contact to n-type Ge with compositional Ti nitride,
        H. D. Wu, W. Huang*, W. F. Lu, R. F. Tang, C. Li*, H. K. Lai, S. Y. Chen, and C. L. Xue,
        Applied Surface Science, 284, 877–880, 2013.

      • Texture Evolution and Grain Competition in NiGe Film on Ge(001),

        Wei Huang*, Mengrao Tang, Chen Wang, Cheng Li, Jun Li, Songyan Chen, Chunlai Xue, and Hongkai Lai,

        Applied Physics Express, 6, 075505, 2013. 

      • Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer,
        Mengrao Tang, Guangyang Lin, Cheng Li*, Chen Wang, Maotian Zhang, Wei Huang, Hongkai Lai, and Songyan Chen,
        J. Appl. Phys., 114, 023515, 2013. 

      • In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition,
        Shihao Huang, Cheng Li*, Chengzhao Chen, Chen Wang, Guangming Yan, Hongkai Lai, and Songyan Chen,
        Appl. Phys. Lett., 102, 182102, 2013. 

      • Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film,
        Dongfeng Qi, Hanhui Liu, Wei Gao, Songyan Chen*, Cheng Li, Hongkai Lai, Wei Huang, and Jun Li,
        Opt. Express, 21, 9923-9930, 2013. 

      • A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission,
        Shihao Huang, Weifang Lu, Cheng Li*, Wei Huang, Hongkai Lai, and Songyan Chen,
        Opt. Express        , 21, 640-646, 2013. 
      • Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing.
        Chen Wang, Cheng Li, Shihao Huang, Weifang Lu, Guangming Yan, Guangyang Lin, Jiangbin Wei, Wei Huang, Hongkai Lai, and Songyan Chen.
        Applied Physics Express. Accepted ,2013.
      • Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics[J],
        Lu Wei-Fang, Li Cheng, Huang Shi-Hao, Lin Guang-Yang,Wang Chen, Yan Guang-Ming, Huang Wei,Lai Hong-Kai, and Chen Song-Yan,
        Chin. Phys. B ,22(10):107703,2013 .
      • The impact of polishing on germanium-on-insulator substrates[J],
        Wang L, Yujiao R, Songyan C, et al.
        Journal of Semiconductors, 34(8): 083005,2013.
      • The influence of the hydrogen ion implantation power density on ion cut in Germanium,
        Yujiao Ruan, Wang Lin, Songyan Chen, Cheng Li, Hongkai Lai, Wei Huang, and Jun Li,
        Journal of Vacuum Science and Technology B, 31(5), 051202, 2013.
      • Alloy conditions Impact on Al/n+-Ge Ohmic contact[J],
        Lin Wang,Ruan Yujiao,Chen Songyan,et al,
        Semiconductor Technology,07,011,.2013.

      　

          2012年：

      • A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1-xGex Epilayer on Si Substrates,
        Mengrao Tang, Cheng Li*, Zheng Wu, Guanzhou Liu, Wei Huang, Hongkai Lai, and Songyan Chen,
        IEEE Trans. Electron. Devices, 59, 2438-2443, 2012        .

      • Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness,
        Zheng Wu, Wei Huang, Cheng Li*, Hongkai Lai, and Songyan Chen,
        IEEE Trans. Electron. Devices, 59, 1328-1331, 2012        .

      • Ohmic Contact Formation of Sputtered TaN on n-Type Ge with Lower Specific Contact Resistivity,
        Zheng Wu, Chen Wang, Wei Huang, Cheng Li*, Hongkai Lai, and Songyan Chen,
        ECS Journal of Solid State Science and Technology, 1, P30-P33, 2012        .

      • Properties of ultra-thin SiGe-on-insulator materials prepared by Ge condensation method,
        Cheng Li*, Shihao Huang, Weifang Lu, Jianfang Xu, Wei Huang, Zhijun Sun, Hongkai Lai, and Songyan Chen,
        Symposium A on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III / Spring Meeting of the European-Materials-Reseach-Society (E-MRS), Strasbourg, FRANCE, MAY 14-18, 2012,
        Physica Status Solidi C-Current Topics in Solid State Physics, 9, 2027-2030, 2012        .
      • Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template,
        Shihao Huang, Cheng Li*, Zhiwen Zhou, Chengzhao Chen, Yuanyu Zheng, Wei Huang, Hongkai Lai, Songyan Chen,
        Thin Solid Films, 520, 2307-2310, 2012        .
      • Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate,
        Yuanyu Zheng, Guanzhou Liu, Cheng Li*, Wei Huang, Songyan Chen, and Hongkai Lai,
        J. Vac. Sci. Technol. B, 30, 011202, 2012        .
      • Review Article - Epitaxial Growth of Germanium on Silicon for Light Emitters,
        Chengzhao Chen, Cheng Li*, Shihao Huang, Yuanyu Zheng, Hongkai Lai, and Songyan Chen,
        International Journal of Photoenergy, 768605, 2012        .
      • Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer,
        Liu Guan-Zhou, Li Cheng*, Lu Chang-Bao, Tang Rui-Fan, Tang Meng-Rao, Wu Zheng, Yang Xu, Huang Wei, Lai Hong-Kai, and Chen Song-Yan,
        Chin. Phys. B, 21, 117701, 2012        .

      　

          2011年：
      • Photoluminescence of Si-based nanotips fabricated by anodic aluminum oxide template,
        Yangjuan Li, Kai Huang*, Hongkai Lai*, Cheng Li, Songyan Chen, and Junyong Kang
        Applied Surface Science, 257, 10671-10673, 2011        .
      • Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density,
        Chengzhao Chen, Linghong Liao, Cheng Li*, Hongkai Lai, and Songyan Chen,
        Applied Surface Science, 257, 2818-2821, 2011        .
      • Impacts of Thermal Annealing on Hydrogen-Implanted Germanium and Germanium-on-Insulator Substrates,
        Yujiao Ruan, Rui Liu, Wang Lin, Songyan Chen*, Cheng Li, Hongkai Lai, Wei Huang, and Xiaoying Zhang,
        Journal of The Electrochemical Society, 158, H1125-H1128, 2011        .
      • Formation and optical properties of nanocrystalline selenium on Si substrate,
        S. W. Pan, S. Y. Chen*, Cheng Li, Wei Huang, and H.K. Lai,
        Thin Solid Films, 519, 6102–6105, 2011        .
      • Optical property investigation of SiGe nanocrystals formed by electrochemical anodization,
        S. W. Pan, Bi Zhou, S. Y. Chen*, Cheng Li, Wei Huang, and H.K. Lai,
        Applied Surface Science, 258, 30-33, 2011.
      • Structural and Optical properties of porous SiGe/Si Multilayer Films
        Bi Zhou, Xuemei Li, Shuwan Pan, Songyan Chen, and Cheng Li,
        10th China Semiconductor Technology International Conference (CSTIC), PEOPLES R CHINA, 2011,
        ECS Transactions, 34, 1145-1149,  2011        .

      　

          2010年：
      • Thermal Stability of Nickel Germanide Formed on Tensile-Strained Ge Epilayer on Si Substrate,
        Mengrao Tang, Wei Huang*, Cheng Li*, Hongkai Lai, and Songyan Chen,
        IEEE Electron Device Lett., 31, 863-865, 2010        .
      • Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates,
        Yanghua Chen,  Cheng Li, Hongkai Lai, and Songyan Chen,
        Nanotechnology, 21, 115207, 2010        .
      • Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature,
        Chengzhao Chen, Zhiwen Zhou, Yanghua Chen, Cheng Li*, Hongkai Lai, and Songyan Chen,
        Applied Surface Science, 256, 6936-6940, 2010.
      • Ge Incorporation in HfO2 Dielectric Deposited on Ge Substrate during Dry/Wet Thermal Annealing,
        Guanzhou Liu, Cheng Li*, Hongkai Lai, and Songyan Chen,
        Journal of The Electrochemical Society, 157, H603-H606, 2010        .
      • Preparation for Si/Se/Si sandwich structure on Si (001),
        Shuwan Pan, Songyan Chen*, Cheng Li, Wei Huang, and Hongkai Lai,
        7th IEEE International Conference on Group IV Photonics (GFP), Beijing, PEOPLES R CHINA, SEP 01-03, 2010,
        IEEE International Conference on Group IV Photonics, 153-155, 2010        .

      　

          2009年：
      • Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator,
        Cheng Li*, Yanghua Chen, Zhiwen Zhou, Hongkai Lai, and Songyan Chen,
        Appl. Phys. Lett., 95, 251102, 2009        .
      • Experimental evidence of oxidant-diffusion-limited oxidation of SiGe alloys,
        Yong Zhang, Cheng Li*, Kunhuang Cai, Yanghua Chen, Songyan Chen, Hongkai Lai, and Junyong Kang,
        J. Appl. Phys., 106, 063508, 2009        .
      • Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy,
        Bi Zhou, Shuwan Pan, Songyan Chen*, Cheng Li, Hongkai Lai, Jinzhong Yu, Xianfang Zhu,
        Journal of Luminescence,  129, 1073-1077, 2009        .
      • Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate,
        Yanghua Chen, Cheng Li*, Zhiwen Zhou, Hongkai Lai, Songyan Chen, Wuchang Ding, Buwen Cheng, and Yude Yu,
        Appl. Phys. Lett., 94, 141902, 2009        .
      • Strain relaxation in SiGe layer during wet oxidation process,
        Yong Zhang, Kunhuang Cai, Cheng Li*, Songyan Chen, Hongkai Lai, and Junyong Kang,
        Applied Surface Science, 255, 3701-3705, 2009        .
      • Strain Relaxation in Ultrathin SGOI Substrates Fabricated by Multistep Ge Condensation Method,
        Yong Zhang, Kunhuang Cai, Cheng Li*, Songyan Chen, Hongkai Lai, and Junyong Kang,
        Journal of The Electrochemical Society, 156, H115-H118, 2009        .

      　

          2008年：
      • Promoting strain relaxation of Si0.72Ge0.28 film on Si(100) substrate by inserting a low-temperature Ge islands layer in UHVCVD,
        Zhiwen Zhou, Zhimeng Cai, Cheng Li*, Hongkai Lai, Songyan Chen, and Jinzhong Yu,
        Applied Surface Science, 255, 2660-2664, 2008        .
      • Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing,
        Yong Zhang, Linghong Liao, Cheng Li*, Hongkai Lai, Songyan Chen, and J. Y. Kang,
        J. Appl. Phys., 104, 093526, 2008        .
      • Comment on "Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate" [Appl. Phys. Lett. 90, 083507 (2007)],
        Zhiwen Zhou*, Cheng Li, Songyan Chen, Hongkai Lai, and Jinzhong Yu,
        Appl. Phys. Lett., 93, 156102, 2008        .
      • Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer,
        Kunhuang Cai, Cheng Li*, Yong Zhang, Jianfang Xu, Hongkai Lai, and Songyan Chen,
        Applied Surface Science, 254, 5363-5366, 2008        .
      • The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,
        Zhiwen Zhou, Cheng Li*, , Hongkai Lai, Songyan Chen, Jinzhong Yu,
        Journal of Crystal Growth, 310, 2508-2513, 2008        .
      • Oxidation behavior of strained SiGe layer on silicon substrate in both dry and wet ambient,
        Cheng Li*, Kunhuang Cai, Yong Zhang, Hongkai Lai, and Songyan Chen,
        Journal of The Electrochemical Society, 155, H156-H159, 2008        .

      • Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate,
        Yong Zhang, Cheng Li*, Song-Yan Chen, Hong-Kai Lai, and Jun-Yong Kang,
        Solid-State Electronics, 52, 1782-1790, 2008.

      • Waveguide Simulation of a THz Si/ SiGe Quantum Cascade Laser,
        Chen Rui, Lin Guijiang, Chen Songyan*, Li Cheng, Lai Hongkai, and Yu Jinzhong,
        Journal of Semiconductors, 29, 893-897, 2008        .
      • Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells,
        Lin Gui-Jiang*, Lai Hong-Kai, Li Cheng, Chen Song-Yan, and Yu Jin-Zhong,
        Chinese Physics B, 17, 1674-1056, 2008.
      • Preparation for SiGe/Si heterogeneous nanostructures via a two-step approach strategy,
        Bi Zhou, Shuwan Pan, Songyan Chen*, Cheng Li, Hongkai Lai, Jinzhong Yu, and Xianfang Zhu,
        5th IEEE International Conference on Group IV Photonics, Sorrento, ITALY, 2008,
        IEEE International Conference on Group IV Photonics, 76-78, 2008        .
      • Metal-semiconductor-metal Ge photodetectors on SOI substrates for near infrared wavelength operation,
        Cheng Li*, Zhiwen Zhou, Zhimeng Cai, Hongkai Lai, and Songyan Chen
        5th IEEE International Conference on Group IV Photonics, Sorrento, ITALY, 2008
        IEEE International Conference on Group IV Photonics, 87-89, 2008        .

      　

       

               中国国家发明专利：一种Ge组分及带宽可调控的SiGe纳米带的制备方法
               申请人：李成，卢卫芳，黄诗浩，林光扬，陈松岩
               专利号：ZL  2013 1 0405028.9

               中国国家发明专利：基于SiGe量子点模板刻蚀技术制备锗硅纳米柱的方法
               申请人：陈松岩，亓东锋，刘翰辉，李成
               公开号：CN 103132077 A

               中国国家发明专利：非平面金属纳米晶多位存储器件的制备方法
               申请人：陈松岩，亓东锋，刘翰辉，李成
               申请号：201310383471.0

               中国国家发明专利：台阶状氧化层Au/SiO2/Si纳米柱存储器件的制备方法
               申请人：陈松岩，亓东锋，刘翰辉，李成
               申请号：201310383280.4

               中国国家发明专利：具有两结锗子电池的四结太阳能电池及其制备方法
               申请人：陈松岩、李欣等
               公开号：CN 102790121 A

               中国国家发明专利：具有两结锗子电池的四结太阳能电池及其制备方法
               申请人：陈松岩、李欣等
               公开号：CN 102790121 A

               中国国家发明专利：一种调节金属与N型锗肖特基接触势垒高度的方法
               申请人：李成、吴政、赖虹凯、陈松岩
               申请号：201010231280.9

               中国国家发明专利：一种锗量子点的制备方法
               申请人：张永、李成、廖凌宏、陈松岩、赖虹凯、康俊勇
               申请号：200810071934.9

               中国国家发明专利：一种SI基微纳发光材料的制备方法
               申请人：陈松岩、周笔、潘书万、李成、赖虹凯
               申请号：200810070671.X

               中国国家发明专利：基于虚衬底的硅锗异质结光晶体管
               申请人：张永、李成、陈松岩、赖虹凯、康俊勇
               申请号：200810070524.2

               中国国家发明专利：利用金属过渡层转移GAN衬底的激光剥离方法
               申请人：陈松岩、张小英、汪建元、赖虹凯
               申请号：200710009396.6

               中国国家发明专利：低位错密度锗硅虚衬底的制备方法
               申请人：李成、蔡坤煌、张      永、赖虹凯、陈松岩
               申请号：200710008498.6

       

  

 

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